FORMATION AND MORPHOLOGY OF PHOSPHORUS AND NICKEL IMPURITY ATOM CLUSTERS IN SILICON DURING SEQUENTIAL DOPING AND THERMAL ANNEALING. Web of Technology: Multidimensional Research Journal, [S. l.], v. 2, n. 9, p. 109–113, 2024. Disponível em: https://webofjournals.com/index.php/4/article/view/6604. Acesso em: 6 jul. 2026.