1.
FORMATION AND MORPHOLOGY OF PHOSPHORUS AND NICKEL IMPURITY ATOM CLUSTERS IN SILICON DURING SEQUENTIAL DOPING AND THERMAL ANNEALING. Web technol. [Internet]. 2024 Sep. 30 [cited 2026 Jul. 6];2(9):109-13. Available from: https://webofjournals.com/index.php/4/article/view/6604